View IPT012N06N_9043526.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1 IPT012N06N rev.2.0,2016-12-09 final data sheet hsof mosfet optimos tm power-transistor ,60v features ?100%avalanchetested ?superiorthermalresistance ?n-channel ?qualifiedaccordingtojedec 1) fortargetapplications ?pb-freeleadplating;rohscompliant ?halogen-freeaccordingtoiec61249-2-21 table1keyperformanceparameters parameter value unit v ds 60 v r ds(on),max 1.2 m w i d 240 a q oss 119 nc q g (0v..10v) 106 nc type/orderingcode package marking relatedlinks IPT012N06N pg-hsof-8 012n06n - 1) j-std20 and jesd22 t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
2 optimos tm power-transistor ,60v IPT012N06N rev.2.0,2016-12-09 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
3 optimos tm power-transistor ,60v IPT012N06N rev.2.0,2016-12-09 final data sheet 1maximumratings at t a =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current i d - - - - - - 240 221 41 a v gs =10v, t c =25c v gs =10v, t c =100c v gs =10v, t c =25c, r thja =40k/w 1) pulsed drain current 2) i d,pulse - - 960 a t c =25c avalanche energy, single pulse 3) e as - - 420 mj i d =100a, r gs =25 w gate source voltage v gs -20 - 20 v - power dissipation p tot - - 214 w t c =25c operating and storage temperature t j , t stg -55 - 175 c iec climatic category; din iec 68-1: 55/175/56 2thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - 0.4 0.7 k/w - device on pcb, minimal footprint r thja - - 62 k/w - device on pcb, 6 cm2 cooling area 1) r thja - - 40 k/w - 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 2) see diagram 3 for more detailed information 3) see diagram 13 for more detailed information t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
4 optimos tm power-transistor ,60v IPT012N06N rev.2.0,2016-12-09 final data sheet 3electricalcharacteristics table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 60 - - v v gs =0v, i d =1ma gate threshold voltage v gs(th) 2.1 2.8 3.3 v v ds = v gs , i d =143a zero gate voltage drain current i dss - - 0.5 10 1 100 a v ds =60v, v gs =0v, t j =25c v ds =60v, v gs =0v, t j =125c gate-source leakage current i gss - 10 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 1.0 1.4 1.2 2.0 m w v gs =10v, i d =100a v gs =6v, i d =50a gate resistance 1) r g - 1.6 2.4 w - transconductance g fs 120 240 - s | v ds |>2| i d | r ds(on)max , i d =100a table5dynamiccharacteristics 1) values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 7800 9750 pf v gs =0v, v ds =30v, f =1mhz output capacitance c oss - 1800 2250 pf v gs =0v, v ds =30v, f =1mhz reverse transfer capacitance c rss - 69 138 pf v gs =0v, v ds =30v, f =1mhz turn-on delay time t d(on) - 16 - ns v dd =30v, v gs =10v, i d =100a, r g,ext =1.8 w rise time t r - 27 - ns v dd =30v, v gs =10v, i d =100a, r g,ext =1.8 w turn-off delay time t d(off) - 48 - ns v dd =30v, v gs =10v, i d =100a, r g,ext =1.8 w fall time t f - 23 - ns v dd =30v, v gs =10v, i d =100a, r g,ext =1.8 w table6gatechargecharacteristics 2) values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 35 - nc v dd =30v, i d =100a, v gs =0to10v gate charge at threshold q g(th) - 22 - nc v dd =30v, i d =100a, v gs =0to10v gate to drain charge 1) q gd - 19 25 nc v dd =30v, i d =100a, v gs =0to10v switching charge q sw - 32 - nc v dd =30v, i d =100a, v gs =0to10v gate charge total 1) q g - 106 124 nc v dd =30v, i d =100a, v gs =0to10v gate plateau voltage v plateau - 4.5 - v v dd =30v, i d =100a, v gs =0to10v gate charge total, sync. fet q g(sync) - 94 - nc v ds =0.1v, v gs =0to10v output charge 1) q oss - 119 149 nc v dd =30v, v gs =0v 1) defined by design. not subject to production test 2) see 2 gate charge waveforms 2 for parameter definition t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
5 optimos tm power-transistor ,60v IPT012N06N rev.2.0,2016-12-09 final data sheet table7reversediode values min. typ. max. parameter symbol unit note/testcondition diode continuous forward current i s - - 179 a t c =25c diode pulse current i s,pulse - - 716 a t c =25c diode forward voltage v sd - 0.9 1.2 v v gs =0v, i f =100a, t j =25c reverse recovery time 1) t rr - 90 180 ns v r =30v, i f =100a,d i f /d t =100a/s reverse recovery charge 1) q rr - 237 474 nc v r =30v, i f =100a,d i f /d t =100a/s 1) defined by design. not subject to production test t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
6 optimos tm power-transistor ,60v IPT012N06N rev.2.0,2016-12-09 final data sheet 4electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 25 50 75 100 125 150 175 0 50 100 150 200 250 p tot =f( t c ) diagram2:draincurrent t c [c] i d [a] 0 25 50 75 100 125 150 175 200 0 50 100 150 200 250 i d =f( t c ); v gs 3 10v diagram3:safeoperatingarea v ds [v] i d [a] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 10 4 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d = t p / t t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
7 optimos tm power-transistor ,60v IPT012N06N rev.2.0,2016-12-09 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 200 400 600 800 1000 1200 10 v 7 v 6 v 5.5 v 5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.drain-sourceonresistance i d [a] r ds(on) [m w ] 0 200 400 600 800 1000 1200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 5 v 5.5 v 6 v 7 v 10 v r ds(on) =f( i d ); t j =25c;parameter: v gs diagram7:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 0 200 400 600 800 1000 1200 175 c 25 c i d =f( v gs );| v ds |>2| i d | r ds(on)max ;parameter: t j diagram8:typ.forwardtransconductance i d [a] g fs [s] 0 50 100 150 200 0 50 100 150 200 250 300 350 g fs =f( i d ); t j =25c t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
8 optimos tm power-transistor ,60v IPT012N06N rev.2.0,2016-12-09 final data sheet diagram9:drain-sourceon-stateresistance t j [c] r ds(on) [m w ] -60 -20 20 60 100 140 180 0.0 0.4 0.8 1.2 1.6 2.0 2.4 max typ r ds(on) =f( t j ); i d =100a; v gs =10v diagram10:typ.gatethresholdvoltage t j [c] v gs(th) [v] -60 -20 20 60 100 140 180 0 1 2 3 4 1430 a 143 a v gs(th) =f( t j ); v gs = v ds diagram11:typ.capacitances v ds [v] c [pf] 0 20 40 60 10 1 10 2 10 3 10 4 10 5 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram12:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 0 10 1 10 2 10 3 10 4 25 c 175 c 25 c, 98% 175 c, 98% i f =f( v sd );parameter: t j t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
9 optimos tm power-transistor ,60v IPT012N06N rev.2.0,2016-12-09 final data sheet diagram13:avalanchecharacteristics t av [s] i av [a] 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 25 c 100 c 125 c i as =f( t av ); r gs =25 w ;parameter: t j(start) diagram14:typ.gatecharge q gate [nc] v gs [v] 0 50 100 150 0 1 2 3 4 5 6 7 8 9 10 48 v 30 v 12 v v gs =f( q gate ); i d =100apulsed;parameter: v dd diagram15:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -60 -20 20 60 100 140 180 52 54 56 58 60 62 64 66 68 v br(dss) =f( t j ); i d =1ma t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8 gate charge waveforms
10 optimos tm power-transistor ,60v IPT012N06N rev.2.0,2016-12-09 final data sheet 5packageoutlines figure1outlinepg-hsof-8 t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8 gate charge waveforms z8b00169619 revision issue date european projection 02 20-02-2014 document no. e5 e4 k1 e millimeters a dim min max inches min max b1 c d d2 e e1 n l 2.20 2.40 0.087 0.094 9.70 0.40 10.28 9.70 1.60 9.90 0.60 10.58 10.10 2.10 0.382 0.016 0.405 0.382 0.063 0.390 0.024 0.416 0.398 0.083 8 8 1.20 (bsc) 0.047 (bsc) b 0.70 0.90 0.028 0.035 1) partially covered with mold flash b2 0.42 0.50 0.017 0.020 h h1 11.48 11.88 0.452 0.468 h2 7.15 0.281 h3 3.59 0.141 h4 3.26 0.128 l1 0.70 0.028 3.30 0.130 7.50 0.295 8.50 0.335 9.46 0.372 6.55 6.75 0.258 0.266 4.18 0.165 l4 1.00 1.30 0.039 0.051 l2 0.60 0.024 2 scale 0 4mm 0 2
11 optimos tm power-transistor ,60v IPT012N06N rev.2.0,2016-12-09 final data sheet revisionhistory IPT012N06N revision:2016-12-09,rev.2.0 previous revision revision date subjects (major changes since last revision) 2.0 2016-12-09 release of final version trademarksofinfineontechnologiesag aurix?,c166?,canpak?,cipos?,coolgan?,coolmos?,coolset?,coolsic?,corecontrol?,crossave?,dave?,di-pol?,drblade?, easypim?,econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,hitfet?,hybridpack?,infineon?, isoface?,isopack?,i-wafer?,mipaq?,modstack?,my-d?,novalithic?,omnitune?,optiga?,optimos?,origa?,powercode?, primarion?,primepack?,primestack?,profet?,pro-sil?,rasic?,real3?,reversave?,satric?,sieget?,sipmos?,smartlewis?, solidflash?,spoc?,tempfet?,thinq?,trenchstop?,tricore?. trademarksupdatedaugust2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2016infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (beschaffenheitsgarantie). withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseofthe productofinfineontechnologiesincustomersapplications. thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.itistheresponsibilityofcustomers technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8 gate charge waveforms z8b00169619 revision issue date european projection 02 20-02-2014 document no. e5 e4 k1 e millimeters a dim min max inches min max b1 c d d2 e e1 n l 2.20 2.40 0.087 0.094 9.70 0.40 10.28 9.70 1.60 9.90 0.60 10.58 10.10 2.10 0.382 0.016 0.405 0.382 0.063 0.390 0.024 0.416 0.398 0.083 8 8 1.20 (bsc) 0.047 (bsc) b 0.70 0.90 0.028 0.035 1) partially covered with mold flash b2 0.42 0.50 0.017 0.020 h h1 11.48 11.88 0.452 0.468 h2 7.15 0.281 h3 3.59 0.141 h4 3.26 0.128 l1 0.70 0.028 3.30 0.130 7.50 0.295 8.50 0.335 9.46 0.372 6.55 6.75 0.258 0.266 4.18 0.165 l4 1.00 1.30 0.039 0.051 l2 0.60 0.024 2 scale 0 4mm 0 2

▲Up To Search▲

Price & Availability of IPT012N06N

	To Download IPT012N06N Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .